Publications : Dr. Tao Yuan

          REFEREED JOURNAL PUBLICATIONS

• T. Yuan, X. Liu, and W. Kuo, “Planning simple step-stress accelerated life tests using Bayesian methods,” IEEE Transactions on Reliability, in press, 2011.
  
  
• T. Yuan, S. Ramadan, and S.-J. Bae, "Yield prediction for integrated circuits manufacturing through hierarchical Bayesian modeling of spatial defects," IEEE Transactions on Reliability, in press, 2011.
  
  
• C.-H. Yang, T. Yuan, W. Kuo, and Y. Kuo, "Nonparametric Bayesian modeling of hazard rate with a change-point for nanoelectronic devices," IIE Transactions, accepted, 2011.
  
  
• T. Yuan and X. Zhu, "Reliability study for ultra-thin gate dielectrics considering film thickness variations," IIE Transactions, accepted, 2011.
  
  
• T. Yuan, W. Kuo, and S.-J. Bae, “Detection of spatial defect patterns generated in semiconductor fabrication processes,” IEEE Transactions on Semiconductor Manufacturing, vol. 24, pp. 392-403, 2011.
  
  
• T. Yuan and Y. Kuo, “Bayesian analysis of hazard rate, change point, and cost-optimal burn-in time for electronic devices,” IEEE Transactions on Reliability, vol. 59, no. 1, pp. 132-138, 2010.
  
  
• T. Yuan, S.-J. Bae, and J.-I. Park, "Bayesian spatial defect pattern recognition in semiconductor fabrication using support vector clustering," International Journal of Advanced Manufacturing Technology, vol. 51, pp. 671-683, 2010.
  
  
• T. Yuan and W. Kuo, “Spatial defect pattern recognition for semiconductor manufacturing using model based clustering and Bayesian inference,” European Journal of Operational Research, vol. 190, pp. 228-240, 2008.
  
  
• T. Yuan and W. Kuo, “A model-based clustering approach to the recognition of spatial defect patterns produced during semiconductor fabrication,” IIE Transactions, vol. 40, no. 2, pp. 93-101, 2008.
  
  
• W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with inserted interface layer,” Applied Physics Letters, vol. 89, article no. 072901, 2006.
  
  
• W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks,” Applied Physics Letters, vol. 88, article no. 202904, 2006.
  
  
• T. Yuan, P.G. Cizmas, and T. O’Brien, “A reduced-order model for a bubbling fluidized bed based on proper orthogonal decomposition,” Computers and Chemical Engineering, vol. 30, pp. 243-259, 2005.
  
  REFEREED PROCEEDINGS PAPERS
  
  
• T. Yuan and X. Liu, “Bayesian planning of optimal step-stress accelerated life test,” In Proceedings of the Annual Reliability and Maintainability Symposium, 2011.
  
  
• T. Yuan and W. Kuo, “Bathtub-shaped hazard rate function for ultra-thin gate dielectrics,” Electrochemical Society Transactions - ULSI vs. TFT Conference, Y. Kuo et al. Eds., vol. 8, no. 1, pp. 243-248, 2007.
  
  
• Y. Kuo, J. Lu, J. Yan, T. Yuan et al., “Sub 2nm thick zirconium doped hafnium oxide high-k gate dielectrics,” Electrochemical Society Transactions on Physics and Technology of High-k Gate Dielectrics III, S. Kar et al. Eds., vol. 1, no. 5, pp. 447-454, 2005.