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Savas Kaya

Professor, Electrical Engineering and Computer Science
Biomedical Engineering,Electrical Engineering and Computer Science,Center for Scientific Computing and Immersive Technologies
STKR 361
kaya@ohio.edu
Phone: 740-597-1633

http://www.savaskaya.net/

From 1998 to 2001, he was a Postdoctoral Researcher at the University of Glasgow, Scotland, U.K., carrying out research in transport and scaling in Si/SiGe MOSFETs, and fluctuation phenomena in decanano MOSFETs. He is currently with the Russ College of Engineering, Ohio University, Athens, OH. He has served as Air Force Office of Scientific Research Summer Faculty Fellow in 2006, 2007 and 2008. He published over 40 journal papers and 50 conference proceedings. His other interests include nanoelectronic devices and circuits, TCAD, transport theory, nanostructures, process integration, ionic transport and biomolecular modelling in trans-membrane proteins. Dr. Kaya was a member of the organizing committee for IWCE 7, (2000), and IEEE Nanotech 6 (2006) and SPIE Photonics East 2007.


Research Interests: Electron Transport, Membrane Protien Structure, Silicon Devices, Nanoelectronics,

All Degrees Earned: Istanbul Technical University, 1992, BSc Electronics and Communication Engineering. M.Phil in Semiconductor Physics & Microelectronic Engineering degree in 1994 from the University of Cambridge, U.K. Ph.D. on SiGe Quantum Electronic Devices in 1998 from Imperial College of Science, Technology & Medicine, London, U.K.

Journal Article, Academic Journal (49)

  • DiTomaso, D., Kodi, A., Matolak, D., Kaya, S., Laha, S., Rayess, W. A-WiNoC: Adaptive Wireless Network-on-Chip Architecture Using Energy-Efficient Transceivers. IEEE: Trans. on Parallel and Distributed Systems.
  • Nazzal, M., Abu-Qtaish, L., Kaya, S., Powers, D. Evaluation of Nano-structure and Nano-Mechanics of Warm Mix Asphalt (WMA) using Atomic Force Microscopy. ASCE: Journal of Materials in Civil Engineering.; http://ascelibrary.org/doi/abs/10.1061/%28ASCE%29MT.1943-5533.0001254.
  • Rajan, P., Dasari, H., Jadwisienczak, W., Kaya, S., Rahman, F. A Systematic Study of Plasma Activation of Silicon Surfaces for Self Assembly. Applied Materials & Interfaces / ACS; http://pubs.acs.org/journal/aamick.
  • Laha, S., Kaya, S., Matolak, D., Rayess, W., DiTomaso, D., Kodi, A. A New Frontier in Ultra-low Power Wireless Links: Network-on-Chip and Chip-to-Chip Interconnects. IEEE: IEEE Transactions on Computer Aided Design for Integrated Circuits and Systems; http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6982195.
  • Wang, J., Dasari, K., Cooper, K., Thota, V., Wright, J., Palai, R., Ingram, D., Stinaff, E., Kaya, S., Jadwisienczak, W. Improved thermal stability and narrowed line width of photoluminescence from InGaN nanorod by ytterbium doping. physica status solidi (c).
  • Laha, S., Kaya, S., Kodi, A., Matolak, D. A 60 GHz High Gain InGaAs pHEMT Power Amplifier with Microstrip Transmission Lines. Analog Integrated Circuits and Signal Processing.
  • Nazzal, M., Mogawer, W., Kaya, S., Bennet, T. Multi-Scale Evaluation of the Composite Asphalt Binder in High RAP Mixtures. ASCE Journal of Materials in Civil Engineering ; http://dx.doi.org/10.1061/(ASCE)MT.1943-5533.0000825.
  • Laha, S., Kaya, S. Bias Optimization of 2.4 GHz Double Gate MOSFET RF Mixer. 3. Analog Integrated Circuits and Signal Processing; 77: 529-537. http://link.springer.com/article/10.1007/s10470-013-0164-1.
  • Matolak, D., Kaya, S., Kodi, A. Channel Modeling for Wireless Networks-on-Chips . 6. IEEE Wireless Communications Magazine; 51: 180-186.
  • Nazzal, M., Kaya, S., Gunay, T., Ahmedzade, P. Fundamental Characterization of Nano-Clay Asphalt Composites. 1. ASCE : Journal of Nanomechanics and Micromechanics; 3: 1-8.
  • Nayak, A., Lin, T., Lam, D., Kaya, S., Islam, S. UV and Oxygen Sensing Properties and Space Charge Limited Transport of Sonochemically Grown ZnO Nanowires. 10. Nanoscience and Nanotechnology Letters; 4: 977-982. http://dx.doi.org/10.1166/nnl.2012.1443.
  • Matolak, D., Kodi, A., Kaya, S., DiTomaso, D., Laha, S., Rayess, W. Wireless Networks-on-Chips: Architecture, Wireless Channel, and Devices. 5. IEEE Wireless Communications Magazine; 19: 58-65. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6339473.
  • Kaya, S., Ting, D., Hamed, H. Improved Reconfigurability and Noise Margins in Threshold Logic Gates via Back-Gate Biasing in DG- MOSFETs. Springer: J Analog Integr. Circ. & Sig. Process.; 68: 101-109. http://www.springerlink.com/content/p01086877605426j/.
  • Kaya, S., Atar, E. Electrochemically Grown Metallic Nanocomb Structures on Nanoporous Alumina Templates. Applied Physics Letters / American Institute of Physics; 98: 223105-223107. http://link.aip.org/link/doi/10.1063/1.3596432.
  • Young, II, W., Kaya, S., Weckman, G. Learning Before Erring: A Brief Note on the Influence of Dielectric Materials to Pursue Moore’s Law. 2. International Journal of Industrial Engineering - Theory, Applications and Practice; 16: 91-98.
  • Kaya, S., Hamed, H., Kulkarni, A. Widely turnable low-power high-linearity current-mode built using DG-MOSFETs. 2. Journal of Analog Integr. Circ. & Sig. Process; 62: 215-222.
  • Fonseca, J., Kaya, S. Temporal and Steric Analysis Of Ionic Permeation and Binding in Na+,K+-ATPase via Molecular Dynamic Simulations. 3. Biophysical Journal; 96: 145a.
  • Fonseca, J., Mishra, S., Kaya, S., Rakowski, R. Exploration of Na+,K+-ATPase Ion Permeation Pathways via Molecular Dynamic Simulation and Electrostatic Analysis. J Computational Electronics; 7: 20.
  • Hamed, H., Kaya, S., Starzyk, J., Analog, J. Use of nano-scale double-gate MOSFETs in low-power tunable current mode analog circuits. Integr. Circ. & Sig. Process; 54: 211.
  • Kaya, S., Hamed, H., Ting, D., Creech, G. Reconfigurable Threshold Logic Gates with nano-scale DG-MOSFETs. Solid-State Electronics; 51: 1301.
  • Fonseca, J., Kaya, S., Guennoun, S., Rakowski, R. Temporal Analysis of Valence & Electrostatics in Ion-Motive Sodium Pump . Journal of Computational Electronics; 6: 381.
  • Fonseca, J., Kaya, S., Rakowski, F. Temporal and steric analysis of ionic permeation and binding in SERCA via molecular dynamic simulations. Institute of Physics (IOP) Nanotechnology; 18: 424022. http://www.iop.org/EJ/abstract/0957-4484/18/42/424022/.
  • Al-Ahmadi, A., Kaya, S. Power•Delay Product in COSMOS Logic Circuits. Journal of Computational Electronics; 5: 305.
  • Kaya, S. COSMOS: A New MOS Device Device Paradigm. IEEE Transactions Nanotechnology; 5: 588.
  • Rakowski, R., Kaya, S., Fonseca, J. Electro-Chemical Modeling Challenges of Biological Ion Pumps. Journal of Computational Electronics; 4: 189.
  • Ma, W., Kaya, S. RF Performance of Strained SiGe pMOSFETs: Linearity and Gain. Journal of Computational Electronics; 4: 269.
  • Kaya, S., Al-Ahmadi, A. Search for Optimum and Scalable COSMOS. Journal of Computational Electronics; 4: 119.
  • Fonseca, J., Kaya, S. Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functions. Solid-State Electronics; 48: 1843.
  • Ma, W., Kaya, S. Impact of device physics on DG and SOI MOSFET linearity. Solid-State Electronics; 48: 1741.
  • Kaya, S., Ma, W. Optimization of RF linearity DG-MOSFETs. IEEE Electron Device Letters; 25: 308.
  • Asenov, A., Kaya, S., Brown, A. Intrinsic Parameter Fluctuations in Decananometre MOSFETs Introduced by Gate Line Edge Roughness. IEEE Transaction Electron Devices; 50: 1254.
  • Asenov, A., Brown, A., Davies, J., Kaya, S., Slavcheva, G. Simulation of Intrinsic Parameter Fluctuations in Decananometre and Nanometre scale MOSFETs. IEEE Transaction Electron Devices; 50: 1837.
  • Kaya, S. Statistical Fluctuation of Universal Mobility Curves in sub-100nm MOSFETs due to Random Oxide Interface. Physica Status Solidi (b); 239: 110.
  • Ma, W., Kaya, S., Asenov, A. Study of RF Linearity in sub-50nm MOSFETs Using Simulations. Journal of Computational Electronics; 2: 347-352.
  • Kaya, S., Asenov, A., Roy, S. Breakdown of Universal Mobility Curves in sub-100nm MOSFETs. IEEE Trans Nanotech.; 1: 260.
  • Asenov, A., Kaya, S., Brown, A. Implications of Imperfect Interfaces and Edges in Ultra-small MOSFET Characteristics. Physica Status Solidi (b); 233: 101.
  • Asenov, A., Kaya, S., Davies, J. Intrinsic Threshold Voltage Fluctuations in Decanano MOSFET's due to Local Oxide Thickness Variations. IEEE Transaction Electron Devices; 49: 112.
  • Kaya, S., Roy, S., Asenov, A. On the Breakdown of Universal Mobility Curves in sub-100nm MOSFETs: A 3D Brownian Simulation Framework. Journal of Computational Electronics; 375.
  • Palmer, M., Braithwaite, G., Grasby, T., Phillips, P., Prest, M., Parker, E., Whall, T., Parry, C., Waite, A., Evans, A., Roy, S., Watling, J., Kaya, S., Asenov, A. Effective Mobilities in Pseudomorphic Si/SiGe/Si p-channel MOSFETs with thin silicon capping layers. 10. Applied Physics Letters; 78: 1424.
  • Straube, U., Evans, A., Braithwaite, B., Kaya, S., Watling, J., Asenov, A. On the Mobility Extraction for HMOSFETs. Solid-State Electronics; 45: 527.
  • Asenov, A., Slavcheva, G., Kaya, S., Balasubramaniam, R. Quantum Corrections to the 'Atomistic' MOSFET simulations. VLSI Design; 13: 15.
  • Zhao, Y., Watling, J., Kaya, S., Asenov, A., Barker, J. Drift Diffusion and Hydrodynamic Simulations of Si/SiGe p-MOSFETs. Material Science & Engineering B; 72: 180.
  • Kaya, S., Zhao, Y., Watling, J., Asenov, A., Barker, J., Ansaripour, G., Braithwaite, G., Parker, E., Whall, T. Indication of Velocity Overshoot in strained Si0.8Ge0.2p-channel MOSFET's. Semiconductor Science & Technology; 15: 573.
  • Asenov, A., Kaya, S., Davies, J., Saini, S. Oxide Thickness Variation Induced Threshold Voltage Fluctuations in Decanano MOSFET's: A 3D Density Gradient Simulation Study. 5/6. Superlattices & Microstructures; 28: 507.
  • Roy, S., Kaya, S., Asenov, A., Barker, J. RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation. IEICE Transactions in Electronics; E83-C: 1224.
  • Yeoh, J., Green, P., Thornton, T., Kaya, S., Fobelets, K., Fernandez, J. MOS gated Si:SiGe quantum wells by anodic oxidation. Semiconductor Science & Technology; 13: 1442.
  • Waltereit, P., Fernandez, J., Kaya, S., Thornton, T. Si/SiGe quantum wells grown on vicinal Si(001) substrates: morphology, dislocation dynamics and transport properties. 18. Applied Physics Letters; 72: 2262.
  • Kaya, S., Thornton, T., Fobelets, K., Green, P., Fernandez, J. Evidence For Inter-Miniband Scattering Due to Electron Heating in Si:SiGe Quantum Wells grown on Tilted Substrates. Physica Status Solidi (b); 204: 227.
  • Thornton, T., Fernandez, J., Kaya, S., Green, P., Fobelets, K. Si:SiGe Quantum wells grown on (118) substrates: surface morphology and transport properties. 10. Applied Physics Letters; 70: 1278.

Book, Chapter in Scholarly Book (2)

Book, Scholarly (1)

  • Asenov, A., Brown, A., Kaya, S. Atomistic Simulation of Decanano MOSFETs. Springer, Berlin: Predictive Simulation of Semiconductor Processing: Status and Challenges; 111-156.

Journal Article, Professional Journal (2)

  • Tanaka, H., Jadwisienczak, W., Kaya, S., Chen, G., Wan, C., Kordesch, M. Ferromagnetism of Cluster and Thickness Dependence in Nickel in situ Doped Amorphous AlN Thin Films. J. of Electronic Materials.
  • Kaya, S., Hamed, H., Starzyk, J. Low-Power Tunable Analog Circuit Blocks Based on Nanoscale Double-Gate MOSFETs. 7. IEEE Trans. Circuits Syst. II; 54: 571-575.

Conference Proceeding (37)

  • Laha, S., Kaya, S., Kodi, A., Matolak, D. LC Oscillators in Nanoscale DG-MOSFETs. Tampa, Florida: IEEE 15th Wireless and Microwave Technology Conference (WAMICON); 1-5. http://dx.doi.org/10.1109/WAMICON.2014.6857767.
  • Rajan, P., Dasari, H., Jadwisienczak, W., Kaya, S. Plasma Activation of Si surfaces: An Easier and Safer Approach for Microsphere Lithography. Bethesda, MD: 7th International Semiconductor Device Research Symposium – ISDRS.
  • Laha, S., Kaya, S. Stability Criterion of LC Oscillators in nanoscale DG-MOSFETs. Bethesda, MD: 7th International Semiconductor Device Research Symposium – ISDRS.
  • Laha, S., Kaya, S., Kodi, A., Matolak, D. W-band Power Amplifier in 0.15μm InGaAs pHEMT Technology with Microstrip Transmission Lines. Bethesda, MD: 7th International Semiconductor Device Research Symposium – ISDRS.
  • Laha, S., Kaya, S. Dead Zone Free Power and Area Efficient Charge Pump Phase Frequency Detector in nanoscale DG-MOSFET. Columbus, Ohio: 56th IEEE International Midwest Symposium on Circuits & Systems (MWSCAS).
  • Kaya, S., Laha, S., DiTomaso, D., Kodi, A., Matolak, D., Rayess, W. On Ultra-Short Wireless Interconnects for NoCs and SoCs: Bridging the 'THz' Gap. Columbus, Ohio: 56th IEEE International Midwest Symposium on Circuits & Systems (MWSCAS).
  • DiTomaso, D., Kodi, A., Matolak, D., Kaya, S., Laha, S., Rayess, W. Energy-Efficient Adaptive Wireless NoCs Architecture. Tempe, Arizona: IEEE/ACM 7th International Symposium on Networks-on-Chip (NoCs); 1-8.
  • Laha, S., Kaya, S., Kodi, A., Matolak, D. 60 GHz Tunable LNA in 32 nm Double Gate MOSFET for a Wireless NoC Architecture. Orlando, Florida: 14th Annual IEEE Wireless and Microwave Technology Conference (WAMICON’13); 1-4.
  • Laha, S., Kaya, S., Kodi, A., Matolak, D. 60 GHz OOK Transmitter in 32 nm DG FinFET. Maui, Hawaii: IEEE International Conference on Wireless Information Technology and Systems.
  • Nazzal, M., Kaya, S., Gunay, T., Ahmedzade, P. Micro-Structural Characterization of Asphalt Nano-Composites. Lino Lakes, MN: 2nd International Symposium on Asphalt Pavements & Environment (ISAP); http://asphalt.org/isap-international-symposium-on-asphalt-pavements-and-environment-held-in-fortaleza-brazil-october-1-3-2012/.
  • Nazzal, M., Kaya, S. The Use of Nano-Mechanics Techniques to Evaluate the Effect of WMA on The Behavior of Asphalt Binders. Lino Lakes, MN: 2nd International Symposium on Asphalt Pavements & Environment (ISAP); http://asphalt.org/isap-international-symposium-on-asphalt-pavements-and-environment-held-in-fortaleza-brazil-october-1-3-2012/.
  • Abraham, I., Kaya, S., Penington, G. A Closed form Memristor SPICE Model and Oscillator. Boise, Idaho: 55th International Midwest Symposium on Circuits & Systems (MWSCAS); 1192-1195. http://www.mwscas2012.org/.
  • DiTomaso, D., Laha, S., Kodi, A., Kaya, S., Matolak, D. Evaluation and Performance Analysis of Energy Efficient Wireless NoC Architecture. Boise, Idaho: 55th International Midwest Symposium on Circuits & Systems (MWSCAS).
  • Nazzal, M., Kaya, S., AbuQtaish, L. Evaluation of WMA Healing Properties Using Atomic Force Microscopy. 7th RILEM International Conference on Cracking in Pavements / Springer; 4: 1125-1134. http://link.springer.com/chapter/10.1007%2F978-94-007-4566-7_107.
  • DiTomaso, D., Laha, S., Kodi, A., Kaya, S., Matolak, D. Energy-Efficient Modulation for a Wireless Network-on-Chip Architecture. Montreal, Canada: 10th IEEE International NEWCAS Conference.
  • Laha, S., Lorek, M., Kaya, S. Optimum Biasing and Design of High Performance Double Gate MOSFET RF Mixers. Seoul: International Symposium on Circuits and Systems – ISCAS 2012 / IEEE; http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6272025.
  • Laha, S., Kaya, S., Kodi, A., Matolak, D. Double Gate MOSFET Based Efficient Wide Band Tunable Power Amplifiers. Cocoa Beach, Florida: 13th Annual IEEE Wireless and Microwave Technology Conference.
  • Laha, S., Wijesundara, K., Kulkarni, A., Kaya, S. Ultra-Compact Low-Power ICO/VCO Circuits with Double Gate MOSFETs. New Jersey: IEEE International Semiconductor Device Research Symposium 2011; 2.
  • Nazzal, M., Kaya, S., Abu-Qtaish, L. "Evaluation of WMA Healing Properties Using Atomic Force Microscopy". Amsterdam: 2nd International Conference on Microstructure Related Durability of Cementitious Composites; http://microdurability.tudelft.nl/Introduction.php.
  • DiTomaso, D., Kodi, A., Kaya, S., Matolak, D. iWISE: Inter-router Wireless Scalable Express Channels for Network-on-Chips (NoCs) Architecture. New Jersey: IEEE 19th Symposium on High-Performance Interconnects (Hot Interconnects); 8. http://dx.doi.org/10.1109/HOTI.2011.12.
  • Kaya, S., Vuppuluri, V., Atar, E. Growth of metallic nanowires on nanoporous alumina templates: Nanocomb Structures. SPIE Proceedings; 7768: 77680S. http://dx.doi.org/10.1117/12.861858.
  • Kaya, S., Hamed, H. On Tunable Compact Analog Circuits with Nanoscale DG-MOSFETs. 53rd IEEE International Midwest Symposium on Circuits and Systems (MWSCAS); 189-192. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5548647&isnumber=5548547.
  • Kaya, S., Kulkarni, A. A Novel Voltage-Controlled Ring Oscillator Based on Nanoscale DG-MOSFETs. Dubai: 20th IEEE Int. Conf. on Microelectronics.
  • Hamed, H., Kaya, S. Low-Voltage Tunable Double-Gate MOSFET Transconductor for VHF/UHF Continuous-Time Filters. Cairo: 19th IEEE Int. Conf. on Microelectronics.
  • Hamed, H., Kaya, S. Low Voltage Programmable Double-Gate MOSFETs Current Mirror and its As Programmable-Gain Current Amplifier. Marrakech: 14th IEEE Int. Conference on Electronics, Circuits and Systems.
  • Kaya, S., Hamed, H. Low-power tunable nanocircuits with DG-MOSFETs for current sensing applications. 67690D. Boston, Ma: Proceedings of SPIE Photonics East – Session 6769: Nanosensing: Materials, Devices, and Systems III; 6769.
  • Fonseca, J., Rakowski, R., Kaya, S. Models, Electrostatics and Molecular Dynamics of the Na+/K+-ATPase. Athens, OH: Ohio Collaborative Conference on Bioinformatics; http://www.occbio.org.
  • Al-Ahmadi, A., Kaya, S. A Novel Single-Gated Strained CMOS Architecture: COSMOS. Tokyo: Int. Conference on Simulation of Semiconductor Process and Devices.
  • Ma, W., Kaya, S. Study of RF Performance for Graded-Channel SOI MOSFETs. Tokyo: Int. Conference on Simulation of Semiconductor Process and Devices.
  • Ma, W., Kaya, S., Asenov, A. Scaling of RF Linearity in DG and SOI MOSFETs. Orlando, FL: 11th IEEE Int. Symposium on Electron Devices for Microwave and Optoelectronic Applications.
  • Palmer, M., Braithwaite, G., Prest, M., Whall, T., Parker, E., Zhao, Y., Kaya, S., Watling, J., Asenov, A., Barker, J., Waite, A., Evans, A. Enhanced Velocity Overshoot and Transconductance in Si/Si0.64Ge0.36/Si p-MOSFETs - Predictions for Deep Submicron Devices. Nunberg, Germany: Proc. of 31st European Solid-state Device Research Conference.
  • Kaya, S., Brown, A., Asenov, A., Magot, D., Linton, T. Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1mm MOSFETs. Athens, Greece: Int. Conference on Simulation of Semiconductor Process and Devices.
  • Ternent, G., Edgar, D., McLelland, E., Williamson, F., Ferguson, N., Kaya, S., Wilkinson, C., Thayne, I., Fobelets, K., Hampson, J. Single stage amplifiers on a CMOS grade silicon substrate using a polymer interlayer dielectric with strained silicon MOSFETs. Sydney: Asia-Pacific Microwave Conference; 767.
  • Ternent, G., Edgar, D., McLelland, H., Ferguson, S., Kaya, S., Wilkinson, C., Thayne, I. Metal Gate Strained Silicon SiGe MOSFETs for Microwave Integrated Circuits. Glasgow, Scotland: 8th IEEE Int. Symposium on Electron Devices for Microwave and Optoelectronic Applications.
  • Zhao, Y., Kaya, S., Watling, J., Asenov, A., Barker, J., Palmer, M., Braithwaite, B., Whall, T., Parker, E., Waite, A., Evans, A. Indication of Non-equilibrium Transport in SiGe p-MOSFETs. Cork, Ireland: Proc. of 30th European Solid-state Device Research Conference ; 224.
  • Asenov, A., Kaya, S. Effect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides. Seattle, WA: Int. Conference on Simulation of Semiconductor Process and Devices.
  • Roy, S., Kaya, S., Asenov, A., Barker, J. RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation. Kyoto, Japan: Int. Conference on Simulation of Semiconductor Process and Devices.

Other (39)

  • Fonseca, J., Kaya, S. Temporal and Steric Analysis Of Ionic Permeation and Binding in Na+,K+-ATPase via Molecular Dynamic Simulations. Boston, MA: Abstract submitted to the Biophysical Society Meeting.
  • Fonseca, J., Clark, K., Hla, S., Rakowski, R., Kaya, S. Study of Ion-Motive ATPase Proteins for Multi-Valued Logic and Storage . Princeton, NJ: NSF EMT Workshop.
  • Kulkarni, A., Kaya, S. Nanocircuits for Sensors and On-Chip Analog Signal Processing. Athens, OH: Int. Conf. on Nanoscale Spectroscopy & Nanotechnology 5.
  • Kaya, S., Hamed, F. Design of Reconfigurable Threshold Logic Using DG-MOSFETs. Amherst, MA: 12th Int. Workshop of Computational Electronics.
  • Fonseca, J., Rakowski, R., Kaya, S. Ion Permeation and Binding in Biomolecular Ion Pumps via Molecular Dynamics . Amherst, MA: 12th Int. Workshop of Computational Electronics.
  • Kaya, S., Hamed, H. Reconfigurable Threshold Logic Gates with nano-scale DG-MOSFETs. Phoenix, AZ: Nano Giga Challenges in Electronics and Photonics.
  • Hamed, H., Kaya, S., Starzyk, J. Compact Tunable Current-Mode Analog Circuits Using DG-MOSFETs. Niagara Falls, NY: 2006 IEEE Int. SOI Conference.
  • Kaya, S., Hamed, H., Starzyk, J. Low-Power Tuneable Analog Circuit Blocks Based on Nanoscale Dual-Gate MOSFETs. Cincinnati, OH: 6th IEEE Conference on Nanotechnology.
  • Fonseca, J., Kaya, S., Rakowski, R., Guennoun, S. Modeling of Binding Sites and Electrostatics in the Ion-Motive Sodium Pump. Cincinnati, OH: 6th IEEE Conference on Nanotechnology.
  • Fonseca, J., Kaya, S., Rakowski, R. Electrostatic Modeling of Ion Motive Sodium Pump. Vienna, Austria: 11th Int. Workshop of Computational Electronics.
  • Al-Ahmadi, A., Kaya, S. Power•Delay Product in COSMOS Logic Circuits. Vienna, Austria: 11th Int. Workshop of Computational Electronics.
  • Reddy, C., Fonseca, J., Guennoun, S., Kaya, S., Rakowski, R. Prediction of the location of binding sites in homology models of metal and alkaline-earth ion binding proteins. Geneva, Switzerland: Swiss Biomedical Research Meeting - USGEB.
  • Al-Ahmadi, A., Kaya, S. Layout and Geometry Tolerances in COSMOS. Washington DC: International Semiconductor Device Research Symposium.
  • Kaya, S., Varadharajan, S. Study of Dual-Gate SOI MOSFETs as RF Mixers. Washington, DC: International Semiconductor Device Research Symposium.
  • Al-Ahmadi, A., Kaya, S. Device Scaling in COSMOS Architecture. Santa Barbara, California: IEEE 63rd Device Research Conference.
  • Fonseca, J., Kaya, S., Rakowski, R. Homology Study of Na,K ATPases Based on SERCA . Tilton, New Hampshire: Mechanisms Of Membrane Transport – A Gordon Research Conference.
  • Rakowski, R., Kaya, S., Fonseca, J. Electro-Chemical Modeling Challenges of Biological Ion Pumps. West Lafayette, Indiana: 10th Int. Workshop of Computational Electronics.
  • Ma, W., Kaya, S. RF Performance of Strained SiGe pMOSFETs: Linearity and Gain. West Lafayette, Indiana: 10th Int. Workshop of Computational Electronics.
  • Fonseca, J., Kaya, S. Simulation of Interface Roughness in DGMOSFETs using Non-Equilibrium Greens Functions. South Bend, Indiana: IEEE 62nd Device Research Conference.
  • Kaya, S. COSMOS: A New MOS Device Device Paradigm. Honolulu, Hawaii: Silicon Nanoelectronics Workshop – VLSI Symposia.
  • Fonseca, J., Kaya, S. Accurate Treatment of Interface Roughness in Nanoscale DGMOSFETs using Non-Equilibrium Green’s Functions. Washington, DC: Int. Semiconductor Device Research Symposium.
  • Ma, W., Kaya, S. Impact of Device Physics on DG and SOI MOSFET Linearity. Washington, DC: Int. Semiconductor Device Research Symposium.
  • Fonseca, J., Kaya, S. Simulation of Interface Roughness in DG-MOSFETs using Non-Equilibrium Green’s Functions. Washington, DC: IEEE 34th SISC.
  • Kaya, S., Ma, W., Asenov, A. Design of DG-MOSFETs for High Linearity Performance. Newport Beach, California: IEEE Int. SOI Conference.
  • Fonseca, J., Kaya, S. Accurate Treatment of Interface Roughness in Nanoscale MOSFETs using Non-Equilibrium Green’s Functions. Ohio Supercomputer Center, Columbus, Ohio: 4th OSC Graduate Student Workshop and Conference.
  • Ma, W., Kaya, S. Electro-thermal Analysis of RF Linearity in DG and SOI MOSFETs. Ohio Supercomputer Center, Columbus, Ohio: 4th OSC Graduate Student Workshop and Conference.
  • Ma, W., Kaya, S., Asenov, A. Study of RF Linearity in sub-50nm MOSFETs Using Simulations. Frascati, Rome: 9th Int. Workshop of Computational Electronics.
  • Kaya, S., Asenov, A. Breakdown of Universal Mobility due to Atomistic Interface Considerations in nano-MOSFETs. Tempe, AZ: 4th Motorola Workshop on Computational Materials and Electronics.
  • Kaya, S., Asenov, A., Roy, S. Breakdown of Universal Mobility Curves in sub-100nm MOSFETs. Honolulu, HI: Silicon Nanoelectronics Workshop – VLSI Symposia.
  • Asenov, A., Kaya, S., Brown, A. Implications of Imperfect Interfaces and Edges in Ultra-small MOSFET Characteristics. Tempe, AZ: 3rd Motorola Workshop on Computational Materials and Electronics.
  • Kaya, S., Asenov, A., Roy, S. On the breakdown of Universal Mobility Curves: A 3D Statistical Simulation Framework. Urbana-Champaign, IL: 8th Int. Workshop of Computational Electronics.
  • Kaya, S., Brown, A., Roy, S., Asenov, A. 3D Modelling of Imperfect Interfaces and Edges in MOSFETs. Maratea, Italy: Quantum Transport Workshop.
  • Brown, A., Kaya, S., Asenov, A., Davies, J., Linton, T. Statistical 3D Simulation of Line Edge roughness in Decanano MOSFETs. Kyoto, Japan: Silicon Nanoelectronics Workshop – VLSI Symposia.
  • Zhao, Y., Watling, J., Kaya, S., Asenov, A., Barker, J. Drift Diffusion and Hydrodynamic Simulations of Si/SiGe p-MOSFETs. Beijing, China: 5th IUMRS Int. Conference on Advanced Materials.
  • Kaya, S. Electrical Transport in Strained Silicon Quantum Wells on Vicinal Substrates. London, England: Imperial College -University of London.
  • Roy, S., Kaya, S., Babiker, S., Asenov, A., Barker, J. Monte Carlo Investigation of Optimal Device Architectures for SiGe FETs. Osaka, Japan: 6th Int. Workshop of Computational Electronics.
  • Ansaripour, G., Braithwaite, G., Parker, E., Whall, T., Kaya, S., Zhao, Y., Watling, J., Asenov, A., Barker, J. Velocity Overshoot in psuedomorphic Si0.8Ge0.2p-MOSFET's. Cardiff, Wales: 8th European Heterostructure Technology Workshop.
  • Kaya, S., Thornton, T., Fobelets, K., Green, P., Fernandez, J. Strained Si/SiGe Quantum Wells and Wires on Vicinal (118) Si Substrates. Kyoto, Japan: Silicon Nanoelectronics Workshop – VLSI Symposia.
  • Kaya, S. Polarisation Insensitive Liquid Crystal Switches for Optical Arrays. Cambridge, England: University of Cambridge.

Conference, Poster (2)

  • Kaya, S., Wright, J., Rahman, F., Jadwisienczak, W. A Comparative Study of Electrospun Polymers and Fibrous Films for Nanosensing. Elazig, Turkey: Nanoscience & Nanotechnology For Next Generation; http://www.nanong2014.org/.
  • Kaya, S., Rajan, P., Rahman, F., Jadwisienczak, W. Plasma Activation for Self Assembly and Nanoink Printing. Elazig, Turkey: Nanoscience & Nanotechnology For Next Generation; http://www.nanong2014.org/.