Skip to: Main Content Search Navigation Secondary Navigation

Tao Yuan

Associate Professor
Industrial and Systems Engineering
STKR 279
Phone: 740.593.1547

Dr. Tao Yuan is an assistant professor in industrial and systems engineering at Ohio University. Yuan joined Ohio University in 2008. Yuan teaches reliability, engineering statistics, engineering probability, operations research, design of experiments, and stochastic processes.

Research Interests: Nanomanufacturing, Advanced Engineering Materials, Stochastic Processes, Bayesian statistics

All Degrees Earned: Ph.D., Industrial Engineering, University of Tennessee, Knoxville, 2007. M.E., Industrial Engineering, Texas A&M University, College Station, 2004. M.S., Aerospace Engineering, Texas A&M University, College Station, 2003. B.E., Thermal Engineering, Tsinghua University, China, 2000.


  • T. Yuan and X. Zhu, "Reliability study for ultra-thin gate dielectric considering film thickness variation," IIE Transactions, vol. 44, pp. 744-753, 2012.
  • C.-H. Yang, T. Yuan, W. Kuo, and Y. Kuo, "Nonparametric Bayesian modeling of hazard rate with a change-point for nanoelectronics devices," IIE Transactions, vol. 44, pp. 496-506, 2012.
  • T. Yuan, X. Liu, and W. Kuo, "Planning simple step-stress accelerated life tests using Bayesian methods," IEEE Transactions on Reliability, vol. 61, pp. 254-263, 2012.
  • T. Yuan, S. Ramadan, and S.-J. Bae, "Yield prediction for integrated circuits manufacturing through hierarchical Bayesian modeling of spatial defects," IEEE Transactions on Reliability, vol. 60, pp. 729-741, 2011.
  • T. Yuan, W. Kuo, and S.-J. Bae, "Detection of spatial defect patterns generated in semiconductor fabrication processes," IEEE Transactions on Semiconductor Manufacturing, vol. 24, pp. 392-403, 2011.

Conference Proceeding (10)

  • Yuan, T., Liu, X., Kuo, Y., Zhang, S. Light Wavelength Effects on Charge Trapping and Detrapping of AIOx Embedded ZrHFO High-K Stack. 2. ECS Transactions; 61: 169-175.
  • Liu, X., Kuo, Y., Yuan, T. Exposure light wavelength effects on charge trapping and detrapping of nc-MoOx embedded ZrHfO high k stack. Materials Research Society Spring Meeting Proceedings; 1562.
  • Liu, X., Yang, C., Kuo, Y., Yuan, T. Nanocrystalline MoOx embedded ZrHfO high-k memories - charge trapping and retention characteristics. ECS Transactions; 45.
  • Yuan, T., , . Bayesian Planning of Optimal Step-Stress Accelerated Life test. Annual Reliability and Maintainability Symposium.
  • Yuan, T. Nonparametric Bayesian Modeling of Reliability of Nanoelectronic Devices. 2011 NSF Engineering Research and Innovation Conference.
  • Bae, S., Yuan, T. Reliability Prediction using Beyesian Change-Point Approaches. 4th Asia-Pacific International Symposium on Advanced Reliability and Maintenance Modeling.
  • Kuo, W., Kuo, Y., Yuan, T. Reliability prediction from nonlinear degradation paths with Bayesian change-point approaches. Proceedings of 2009 NSF Engineering Research and Innovation Conference.
  • Kuo, W., Kuo, Y., Yuan, T. Detecting spatial defect patterns on semiconductor wafers using model-based clustering. 2008 NSF Engineering Research and Innovation Conference.
  • Yuan, T., Kuo, W. Bathtub-Shaped Hazard Rate Function for Ultra-thin Gate Dielectrics. 1. Electrochemical Society Transactions - ULSI vs. TFT Conference; 8: 243-248.
  • Kuo, Y., Lu, J., Yan, J., Yuan, T. Sub 2nm Thick Zirconium Doped Hafnium Oxide High-k Gate Dielectrics. 5. Electrochemical Society Transactions on Physics and Technology of High-k Gate dielectrics III; 1: 447-454.

Journal Article, Professional Journal (5)

  • Yuan, T., Kuo, Y. Bayesian analysis of hazard rate, change point, and cost-optimal burn-in time for electronic devices. 1. IEEE Transactions on Reliability; 59: 132-138.
  • Yuan, T., Kuo, W. A Model-Based Clustering Approach to the Recognition of Spatial Defect Patterns Produced During Semiconductor Fabrication. 2. Institute of Industrial Engineers Transactions; 40: 93-101.
  • Yuan, T., Kuo, W. Spatial defect pattern recognition for semiconductor manufacturing using model-based clustering and Bayesian inference. European Journal of Operational Research; 190: 228-240.
  • Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., Kuo, W. Charge Trapping and Dielectric Relaxation in Connection wtih Breakdown of High-k Gate Dielectric Stacks. 20. Applied Physics Letters; 88: 202904.
  • Yuan, T., Cizmas, P., O'Brien, T. A Reduced-Order model for a Bubbling Fluidized Bed Based on Proper Orthogonal Decomposition. Computers and Chemical Engineering; 30: 243-259.

Journal Article, Academic Journal (14)

  • Yuan, T., Liu, S., Kuo, Y. Bayesian Analysis for Accelerated Life Tests using a Dirichlet Process Weibull Mixture Model. 1. IEEE Transactions on Reliability; 63: 58-67.
  • Chuang, C., Yuan, T., Dmowski, W., Wang, G., Freels, M., Liaw, P., Li, R., Zhang, T. Fatique-induced Damage in Zr-based Bulk Metallic Glasses. 2578. Scientific Reports; 3.
  • Yuan, T., Wang, G., Feng, Q., Liaw, P., Yokoyama, Y., Inoue, A. Modeling Size Effects on Fatigue Life of a Zirconium-based Bulk-Metallic Glass under Bending. Acta Meterialla; 61: 273-279.
  • Cheng, N., Yuan, T. Non-parametric Bayesian Lifetime Data Analysis using Dirichlet Process Lognormal Mixture Model. 3. Naval Research Logistics; 60: 208-221.
  • Hemphill, M., Yuan, T., Wang, G., Yeh, J., Tsai, C., Chuang, A., Liaw, P. Fatigue Behavior of AI0.5CoCrCuFeNi high entropy alloys. 16. Acta Materialia; 60: 5723-5734.
  • , X., Yang, C., Kuo, Y., Yuan, T. Memory Functions of molybdenum oxide nanodots-embedded ZrHfo high k. 6. ElectroChemical and Solid-State Letters; 15: 192-194.
  • Yang, C., Yuan, T., Kuo, W., Kuo, Y. Non-parametric Bayesian modeling of hazard rate with a change point for nanoelectronic devices. 7. IIE Transactions; 44: 496-506.
  • Yuan, T., Liu, X., Kuo, W. Planning Simple step-stress accelerated life tests using Bayesian methods. 1. IEEE Transactions on Reliability; 61: 254-263.
  • Yuan, T., Zhu, X. Reliability study of ultra-thin dielectric films with variable thickness levels. 9. IIE Transactions; 44: 744-753.
  • Yuan, T. Detection of Spatial Defect Patterns Generated in Semiconductor Fabrication Processes. IEEE Transactions on Semiconductor Manufacturing; 24: 392-403.
  • Yuan, T., Ramadan, S., Bae, S. Yield Prediction for Integrated Circuits Manufacturing through Hierarchical Bayesian Modeling of Spatial Defects. IEEE Transactions on Reliability; 60: 729-741.
  • Yuan, T., Bae, S., Park, J. Bayesian spatial defect pattern recognition in semiconductor fabrication using support vector clustering. International Journal of Advanced Manufacturing Technology; 51: 671-683.
  • Yuan, T. Construction Project Scheduling with Time, Cost and Material Restrictions Using Fuzzy Mathematical Models and Critical Path Model. Journal of Construction Engineering and Managment; 1096-1104.
  • Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., Kuo, W. Breakdown Phenomena of Zirconium-Doped Hafnium Oxide High-k Stack with Inserted Interface Layer. 1. Applied Physics Letters; 89: 072901.