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Wojciech Jadwisienczak

Associate Professor
Electrical Engineering and Computer Science
STKR 363
jadwisie@ohio.edu
Phone: 740.593.2067

Wojciech M. Jadwisienczak hails from Torun, Poland, and joined Ohio University in 1996. Since 2001, he has taught with the School of Electrical Engineering and Computer Science in the Russ College of Engineering and Technology. His primary research focuses on fundamental properties and applications of semiconductors for optoelectronics, spintronics and photovoltaics. Specifically, he is involved with spectroscopy of semiconductors doped with lanthanides. His other research interests include nanophotonics, spintronics, and materials and devices for deep-UV light generation and applications. He advises a group of research students working on independent projects sponsored by the NSF, AFOSR and ARO. His advisees received the Fulbright (2007) and DoD (2011) Fellowships in the past. He is a member of the American Physical Society, Materials Research Society, and Optical Society of America. He has published more than 50 scientific papers cited more than 800 times.


Research Interests: Optical Electrical and Magnetic Properties of Wide Bandgap Semiconductors, Optoelectronic Devices and Lasers, Nanotechnology and Photonic Materials, Materials and Devices for Deep UV-light, Generation and Applications, Materials for Photovoltaics

All Degrees Earned: Ph.D., Electrical Engineering, Ohio University, 2001. M.S., Physics, Nicholas Copernicus University, Poland, 1995.

Publications:

1. H. J. Lozykowski, W. M. Jadwisienczak and I. Brown Visible Cathodoluminescence of GaN doped with Dy, Er and Tm, Appl. Phys. Lett. Vol. 74, 1129 (1999).

2. W. M. Jadwisienczak, H. J. Lozykowski, I. Berishev, A. Bensaoula and I. G. Brown, Visible Emission from AlN Doped with Eu and Tb Ions, J. Appl. Phys. Vol. 89, 4384 (2001).

3. A. Khan, W. M. Jadwisienczak, and M. E. Kordesch, From Zn Microspheres to Hollow ZnO Microspheres: A simple Route to the Growth of Large Scale Metallic Zn Micorspheres and Hollow ZnO Microspheres, Physica E, Vol.33, 331 (2006).

4. K. Wisniewski, W. M. Jadwisienczak, T. Thomas and M. Spencer, High Pressure Luminescence Studies of Europium Doped GaN, J. Rare Earth, Vol. 27, pp.667-670 (2009).

5. J. Wu, R. Palai, W. M. Jadwisienczak, M. S. Shur, Bandgap Engineering in MBE Grown Al(1-x)GaxN Epitaxial Columnar Nanostructures, J. Phys. D: Appl. Phys. 45, 015104 (2012).

Journal Article, Academic Journal (33)

  • Rajan, P., Dasari, H., Jadwisienczak, W., Kaya, S., Rahman, F. A Systematic Study of Plasma Activation of Silicon Surfaces for Self Assembly. Applied Materials & Interfaces / ACS; http://pubs.acs.org/journal/aamick.
  • Wang, J., Dasari, K., Cooper, K., Thota, V., Wright, J., Palai, R., Ingram, D., Stinaff, E., Kaya, S., Jadwisienczak, W. Improved thermal stability and narrowed line width of photoluminescence from InGaN nanorod by ytterbium doping. physica status solidi (c).
  • Jadwisienczak, W., Dasari, K., Thapa, B., Jaime, S., Huhtinen, H., Palai, R. Growth and Characterization of Er and Yb Doped InGaN Thin Films. J. of Physics D: Condensed Matter.
  • Jadwisienczak, W., Palai, R., Wu, J., Tanaka, H., Wang, J., Huhtinen, H., Anders, A. Ferromagnetic Behavior and Optical Properties in Ytterbium-doped and Ytterbium Implanted GaN Semiconductor Epilayers. J. of Physics D: Condensed Matter.
  • Jadwisienczak, W., Thapa, B., Palai, R., Dasari, . Growth And Characterization Of Tantalum Oxide Thin Films Grown On Silicon Substrate Of Different Orientaations. J. of Physics D: Condensed Matter.
  • Jadwisienczak, W., Wang, J., Dasari, K., Palai, R. Excitation and Luminescence Recombination Dynamics in GaN Epilayers and Nano-column Structures in situ doped with Ytterbium. J. of Physics D: Condensed Matter.
  • Jadwisienczak, W., Kallel, T., Dammak, ., Wang, J., Anders, A. Optical and Vibrational Characterizations of AlN:Er Epilayers. Optical Materials.
  • Jadwisienczak, W., Kallel, T., Dammak, M., Khmekhem, H., Wang, J. Raman Characterization and Stress Analysis of Erbium Implanted AlN Epilayers Grown on Sapphire and Silicon . Phys. Rev. B.
  • Jadwisienczak, W., Wisniewski, K., Ingram, D. Optical properties, luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor. Radiation Measurements; 54: 500.
  • Jadwisienczak, W., Wisniewski, K., Thomas, T., Spencer, M. High Pressure Luminescence Studies of Europium Doped GaN. J. Rare Earth; 27: 667-670.
  • Koubaa, T., Dammak, M., Kamoun, M., Jadwisienczak, W., Lozykowski, H., Anders, A. Spectra and energy levels of Yb3+ in AlN. J. Appl. Phys.; 106: 013106-6.
  • Khan, A., Khan, S., Jadwisienczak, W., Kordesch, M. Raman spectroscopic studies of monoclinic Gallium Oxide (β-Ga2O3) Nanostructures: A comparison between nanowires vs. nanobelts. Science of Advanced Materials; 11: 122-125.
  • Khan, A., Jadwisienczak, W., Lozykowski, H., Kordesch, M. Catalyst-Free Synthesis and Luminescence of Aligned ZnO Nanorods. Physica E; 39: 258-261.
  • Lozykowski, H., Jadwisienczak, W. Thermal Quenching of Luminescence and Isovalent Traps Model for Rare Earth Ions Doped AlN. phys. stat. sol. (b); 244: 2109-2126.
  • Jadwisienczak, W., Khan, A., Kordesch, M. From Zn Microspheres to Hollow ZnO Microspheres: A simple Route to the Growth of Large Scale Metallic Zn Micorspheres and Hollow ZnO Microspheres. Physica E; 33: 331.
  • Khan, A., Jadwisienczak, W., Kordesch, M. One Step Preparation of Ultra-wide β-Ga2O3 Nanosheets and Nanobelts and their Photoluminescence study. Physica E; 35: 207-211.
  • Jadwisienczak, W., Lozykowski, H., Bensaoula, A., Monteiro, O. Luminescence and Excitation Mechanism of Pr, Eu, Tb and Tm Ions Implanted into AlN. Microelectronics Journal; 36: 453.
  • Jadwisienczak, W., Lozykowski, H. Optical Properties of Yb Ion in GaN Epilayer. Optical Materials; 23: 175.
  • Gruber, J., Zandi, B., Lozykowski, H., Jadwisienczak, W. Spectra and energy levels of Tb3+ (4f8) in GaN. J. Appl. Phys.; 92: 5127.
  • Gruber, J., Zandi, B., Lozykowski, H., Jadwisienczak, W. Spectroscopic Properties of Sm3+ (4f5) in GaN. J. Appl. Phys.; 91: 2929.
  • Jadwisienczak, W., Lozyknowski, H., Xu, A., Patel, B. Visible Emission from ZnO Doped with Rare Earth Ions. J. Electron. Materials; 31: 776.
  • Lozykowski, H., Jadwisienczak, W., Brown, I. Cathodoluminescence Study of GaN doped with Tb. Material Science & Engineering B; 81/1-3: 140.
  • Gruber, J., Zandi, B., Lozykowski, H., Jadwisienczak, W., Brown, I. Crystal-field splitting of Pr3+ (4f2) energy levels in GaN. J. Appl. Phys.; 89: 7973.
  • Jadwisienczak, W., Lozykowski, H., Berishev, I., Bensaoula, A., Brown, I. Visible Emission from AlN Doped with Eu and Tb Ions. J. Appl. Phys; 89: 4384.
  • Jadwisienczak, W., Lozykowski, H., Perjeru, F., Chen, H., Kordesch, M., Brown, I. Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering. Appl. Phys. Lett.; 76: 3376.
  • Lozykowski, H., Jadwisienczak, W., Han, J., Brown, I. Luminescence Properties of GaN and Al0.14Ga0.86N/GaN Superlattice Doped with Europium. Appl. Phys. Lett.; 77: 767.
  • Lozykowski, H., Jadwisienczak, W., Brown, I. Photoluminescence and Cathodoluminescence of GaN Doped with Pr. J. Appl. Phys.; 88: 210.
  • Lozykowski, H., Jadwisienczak, W., Brown, I. Photoluminescence and Cathodoluminescence of GaN doped with Pr. MRS Internet J. Nitride Semicond. Res. 5S1, W11.64.
  • Lozyknowski, H., Jadwisienczak, W., Brown, I. Photoluminescence and Cathodoluminescence of GaN Doped with Tb. Appl. Phys. Lett.; 76: 861.
  • Chen, H., Gurumurugan, K., Kordesch, M., Jadwisienczak, W., Lozykowski, H. Visible and Infrared Emission from GaN:Er Thin Films Grown by Sputtering. MRS Internet J. Nitride Semicond. Res. 5S1, W3.16.
  • Lozykowski, H., Jadwisienczak, W., Brown, I. Cathodoluminescence of GaN doped with Sm and Ho. Solid State Commun.; 110: 253.
  • Jadwisienczak, W., Gurumurugan, K., Chen, H., Harp, G., Lozykowski, H. Visible Cathodoluminescence of Er Doped Amorphous AlN Thin Films by Sputtering. Appl. Phys. Lett.; 74: 3008.
  • Lozykowski, H., Jadwisienczak, W., Brown, I. Visible Cathodoluminescence of GaN doped with Dy, Er and Tm. Appl. Phys. Lett.; 74: 1129.

Book, Chapter in Scholarly Book (2)

  • Jadwisienczak, W., Maqbool, M., Kordesch, M. Cathodoluminescence from Amorphous and Nanocrystalline Nitride Thin Films Doped with Rare Earth and Transition Metals. Intech; 44. http://intechopen.com.
  • Maqbool, M., Jadwisienczak, W., Kordesch, M. Book chapter: Cathodoluminescence from Amorphous and Nano-crystalline Nitride and Oxide Thin Films Doped with Rare Earth and Transition Metals. InTech - Open Access Publisher.

Conference Proceeding (20)

  • Rajan, P., Dasari, H., Jadwisienczak, W., Kaya, S. Plasma Activation of Si surfaces: An Easier and Safer Approach for Microsphere Lithography. Bethesda, MD: 7th International Semiconductor Device Research Symposium – ISDRS.
  • Morris, J., Anderson, A., Jadwisienczak, W., Riefler, G. Water disinfection of Bacillus subtilis spores using ultraviolet light emitting diodes. Water Resource Sustainability Issues on Tropical Islands.
  • Jadwisienczak, W., Tanaka, H., Chen, G., Kordesch, M. Morphology and Magneto-optical Properties of Amorphous AlN Films Doped with Nickel. Mater. Res. Soc. Symp. Proc.; 1290: 1290:1-6. http://www.mrs.org/home/.
  • Jadwisienczak, W., Tanaka, H., Chen, G., Kordesch, M., Khan, A. Morphology and Magneto-optical Properties of Amorphous AlN Films Doped with Nickel. Materials Research Society Symposium Proceedings.
  • Ebdah, M., Jadwisienczak, W., Wang, J., Kordesch, M. Structural Study of InGaN/GaN Quantum Wells Implanted with Eu3+ Ions. Materials Research Society Symposium Proceedings. ; 1202: 1202-I05-20.
  • Jadwisienczak, W., Tanaka, H., Kordesch, M., Khan, A., Kaya, S., Vuppuluri, V. Studies of Ni and Co doped Amorphous AlN for Magneto-Optical Applications. Materials Research Society Symposium Proceedings. ; 1202: 1202-06.
  • Jadwisienczak, W., Ramadan, S., Thomas, T., Spencer, M., Garces, N., Glaser, E., Wisniewski, K. Luminescence and Excitation Mechanisms of Eu-doped GaN Phosphors. MRS. Symp. Proc.; 1111: 1111-D02-07.
  • Ebdah, M., Jadwisienczak, W., Kordesch, M., Ramadan, S., Morkoc, H., Anders, A. Studies of III-Nitride Superlattice Structures Implanted with Lanthanide Ions. Mater. Res. Soc. Symp. Proc.; 111.
  • Jadwisienczak, W., Vemuru, A., Khan, S., Khan, A., Kordesch, M. Visible Luminescence of Rare Earth Ions Doped Amorphous Zinc Oxide Thin Films Grown by Sputtering Technique. Mater. Res. Symp. Proc; 1035: 1035-L11-19.
  • Jadwisienczak, W., Khan, A., Kordesch, M., Lozykowski, H. Fabrication and Luminescence Properties of Monoclinic Ga2O3 Nanostructures,. Symposium E: Nanofunctional Materials, nanostructures, and Novel Devices for Biological and Chemical Detection, Mater. Res. Soc. Symp. Proc.; 951: 0951-E09-42.
  • Khan, A., Jadwisienczak, W., Khan, S., Kordesch, M. ZnO Nanofibers Doped with Ga, In and Er Fabricated by Electrospinning Technique. Symposium K: Zinc Oxide and Related Materials, Mater. Res. Soc. Symp. Proc.; 957: 0957-K10-49.
  • Khan, A., Jadwisienczak, W., Kordesch, M. Synthesis of Novel ZnO Nanostructures: Spheres, Sheets, Needles, Tipped Nanorods and Wires, Polyhedral Cages, Shells and Microphone Like Structures, O6.18. Mater. Res. Soc. Symp. Proc.; 900E: 0900-O06-18-1.
  • Lozykowski, H., Jadwisienczak, W., Brown, I. Luminescence Properties of GaN:Tb, Al0.14Ga0.86N/GaN Superlattice and AlN:Tb and Eu. Bull. Am. Phys. Soc., 46N1, R40-41, 826.
  • Jadwisienczak, W., Lozykowski, H., Xu, A., Patel, B. Visible Emission from ZnO Doped with Rare Earth Ions. The 2001 U.S. Workshop on the Physics and Chemistry of II-VI Materials; 85-86.
  • Jadwisienczak, W., Lozykowski, H., Berishev, I., Bensaoula, A., Brown, I. Visible Emission from AlN Doped with Eu, Tb, and Er Ions. Monterey, CA: Proceeding of the 2000 IEEE International Symposium on Compound Semiconductors; 489.
  • Hassan, Z., Kordesch, M., Jadwisienczak, W., Lozykowski, H. Low Temperature ECR Plasma assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Determination for Electronic Devices. Mat. Res. Soc. Sympos. Proc.
  • Jadwisienczak, W., Lozykowski, H. Luminescence Properties of As, P, and Bi as Isoelectronic Traps in GaN. Mat. Res. Soc. Sympos. Proc.; 482: 1033.
  • Jadwisienczak, W., Lozykowski, H. Photoluminescence from GaN Implanted with Phosphorus and Bismuth. San Diego: Proceeding of the IEEE 24th Inter. Sympos.; 271.
  • Jadwisienczak, W., Koepke, C., Wisniewski, K., Grinberg, M. Spectroscopic Evaluation of Titanium Doped Glass. Proceeding of SPIE; 21: 3176.
  • Jadwisienczak, W., Koepke, C., Wisniewski, K., Grinberg, M., Russell, D., Holliday, K. Structure of the 2Eg 4A2 Emission in Cr3+: Gahnite Glass Ceramics. Proceeding of SPIE; 42: 3176.

Journal Article, Professional Journal (21)

  • Kallel, T., Dammak, M., Wang, J., Jadwisienczak, W., Wu, J., Palai, R. Optical studies and crystal field calculation of GaN nanorods doped with Yb3+ ions. Journal of Alloys and Compounds; 609: 284–289. http://www.sciencedirect.com/science/article/pii/S0925838814009955.
  • Kallel, T., Dammak, M., Khmekhem, H., Wang, J., Jadwisienczak, W. Raman Characterization and Stress Analysis of AlN:Er3+ Epilayers Grown on different substrates. Materials Science and Engineering: B; 187: 46–52. http://www.sciencedirect.com/science/article/pii/S0921510714000993.
  • Tanaka, H., Jadwisienczak, W., Saito, H., Zayets, V., Yuasa, S., Ando, K. Localized sp-d exchange interaction in ferromagnetic Ga1-xMnxAs observed by magnetic circular dichroism spectroscopy of L critical point. 35. Journal of Physics D: Applied Physics Email alert RSS feed; 47: 355001. http://iopscience.iop.org/0022-3727/47/35/355001.
  • Podhorodecki, A., Golacki, L., Zatryb, G., Misiewicz, J., Wang, J., Jadwisienczak, W., Fedus, K., Wojcik, J., Wilson, P., Mascher, P. Excitation mechanism and thermal emission quenching of Tb ions in Silicon Rich Silicon Oxide thin films grown by PECVD. 14. Journal of Applied Physics; 115: 143510-10.
  • Sajjad, M., Guinel, M., Jadwisienczak, W., Varshney, D., Morell, G., Feng, P. Nanoscale Structure Study of Boron Nitride Nanosheets and Development of Deep-UV Photo-Detector. Nanoscale; 6: 4577-4582 . http://pubs.rsc.org/en/content/articlelanding/nr/2014/c3nr05817d#!divAbstract.
  • Beltran-Huarac, J., Resto , O., Jadwisienczak, W., Weiner, B., Morell, G. Single-Crystal Core/Shell γ-MnS/C Nanowires. 2. ACS Appl. Mater. Interfaces; 6: 1180–1186. http://pubs.acs.org/doi/abs/10.1021/am404746k.
  • Jadwisienczak, W., Beltran-Huarac, J., Resto, O., Carpena-Nunez, J., Weiner, B., Morell, G. Single-crystal γ-MnS nanowires conformally-coated with carbon. 2. ACS Applied Materials & Interfaces; 6: 1180–1186.
  • Jadwisienczak, W., Beltran-Huarac, J., Wang, J., Tanaka, H., Weiner, B., Morell, G. Stability of the Mn Photoluminescence in Bifunctional ZnS:0.05Mn Nanoparticles . 5. Journal of Applied Physics; 114: 053106-053109.
  • Morris, J., Anderson, A., Jadwisienczak, W., Riefler, G. Water Disinfection of Bacillus Subtilis Spores Using Ultraviolet Light Emitting Diodes. J. Water Research.
  • Sajjad, M., Jadwisienczak, W., Feng, P. Otical and Electrical Properties of White Graphene Boron Nitride Nanosheets. J. Nanoscience and Nanotechnology.
  • Tanaka, H., Jadwisienczak, W., Kaya, S., Chen, G., Wan, C., Kordesch, M. Ferromagnetism of Cluster and Thickness Dependence in Nickel in situ Doped Amorphous AlN Thin Films. J. of Electronic Materials.
  • Jadwisienczak, W., Wang, J. Red Emission from Strained InGaN/GaN Superlattice Implanted with Europium for Optoelectronics. J. of Supperlattices and Microstrutures.
  • Kallel, T., Koubaa, T., Dammak, M., Jadwisienczak, W. Optical Characterization and Crystal Field Calculation of Substitutional Er3+ in AlN Epilayers. J. Lumininescence ; 134: 893--899. DOI: http://dx.doi.org/10.1016/j.jlumin.2012.06.021.
  • Wu, J., Rivera, A., Martinez, A., Liu, K., Shur, M., Yue, L., He, X., Binek, C., Huhtinen, H., Jadwisienczak, W. Room temperature Ferromagnetic Behavior in MBE Grown GaNŸb Semiconductor Thin Films. J. Applied Physics.
  • Jadwisienczak, W., Wu, J., Palai, R., Shur, M. Bandgap engineering in MBE grown Al1-xGaxN epitaxial columnar nanostructures. J. Phys. D: Appl. Phys.; 45: 015104.
  • Jadwisienczak, W., Palai, R., Wang, ., Tanaka, H., Wu, J., Huhtinen, H., Anders, A. Optical Activity of Ferromagnetic Ytterbium Doped III-Nitride Epilayers. phys. stat. sol. (c).; 8: 2185.
  • Khan, A., Khan, S., Jadwisienczak, W. One Step Growth of ZnO Nano-Tetrapods by Simple Thermal Evaporation Process: Structural and Optical Properties. 4. Science of Advanced Materials; 2: 572-577. http://www.ingentaconnect.com/content/asp/sam/2010/00000002/00000004/art00019.
  • Jadwisienczak, W., Wang, J., Tanaka, H. Optical and Magnetic Properties of GaN Epilayers Implanted with Ytterbium. 6. Journal of Rare Earth; 28: 931-935.
  • Jadwisienczak, W., Palai, R., Wang, J., Tanaka, H., , . Optical Activity of Ferromagnetic Ytterbium Doped III-Nitride Epilayers. phys. stat. sol. (c).
  • Jadwisienczak, W., Wisniewski, K., Spencer, M., Thomas, T., ingram, D. Optical Properties, Luminescence Quenching Mechanism and Radiation Hardness of Eu-doped GaN Red Powder Phosphor. Radiation Measurements; 45: 500-504.
  • Koubaa, T., Dammak, M., Kammoun, M., Jadwisienczak, W., Lozykowski, H. Crystal Field and Zeeman parameters of Substitutional Yb3+ Ion in GaN. Journal of Alloys and Compounds; 496: 56–60.

Other (1)

  • Jadwisienczak, W., Dierolf, V., Fujiwara, Y., Gregorkiewicz, T. Rare-Earth Doping of Advanced Materials for Photonic Applications. Materials Research Society; 1342: 117.

Conference, Poster (2)

  • Kaya, S., Wright, J., Rahman, F., Jadwisienczak, W. A Comparative Study of Electrospun Polymers and Fibrous Films for Nanosensing. Elazig, Turkey: Nanoscience & Nanotechnology For Next Generation; http://www.nanong2014.org/.
  • Kaya, S., Rajan, P., Rahman, F., Jadwisienczak, W. Plasma Activation for Self Assembly and Nanoink Printing. Elazig, Turkey: Nanoscience & Nanotechnology For Next Generation; http://www.nanong2014.org/.

Online Article (1)

Patents

  • Jadwisienczak, W., Rahman, F. Modification and control of internal quantum efficiency of rare-earth doped luminescent materials through the application of external magnetic fields.
  • Jadwisienczak, W., Lozykowski, H. Gallium Nitride Doped with Rare Earth Ions and Methods and Structure for Achieving Visible Light Emission. Canadian Pat. #2362956.
  • Jadwisienczak, W., Lozykowski, H. Gallium Nitride Doped with Rare Earth Ions and Methods and Structure for Achieving Visible Light Emission. U. S. Pat. # 6,277,664 B1.
  • Jadwisienczak, W. Gallium Nitride Doped with Rare Earth Ions and Methods and Structure for Achieving Visible Light Emission. U. S. Pat. # 6,140,669.