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Wojciech Jadwisienczak

Associate Professor
Electrical Engineering and Computer Science
STKR 363
Phone: 740.593.2067

Wojciech M. Jadwisienczak hails from Torun, Poland, and joined Ohio University in 1996. Since 2001, he has taught with the School of Electrical Engineering and Computer Science in the Russ College of Engineering and Technology. His primary research focuses on fundamental properties and applications of semiconductors for optoelectronics, spintronics and photovoltaics. Specifically, he is involved with spectroscopy of semiconductors doped with lanthanides. His other research interests include nanophotonics, spintronics, and materials and devices for deep-UV light generation and applications. He advises a group of research students working on independent projects sponsored by the NSF, AFOSR and ARO. His advisees received the Fulbright (2007) and DoD (2011) Fellowships in the past. He is a member of the American Physical Society, Materials Research Society, and Optical Society of America. He has published more than 50 scientific papers cited more than 800 times.

Research Interests: Optical Electrical and Magnetic Properties of Wide Bandgap Semiconductors, Optoelectronic Devices and Lasers, Nanotechnology and Photonic Materials, Materials and Devices for Deep UV-light, Generation and Applications, Materials for Photovoltaics

All Degrees Earned: Ph.D., Electrical Engineering, Ohio University, 2001. M.S., Physics, Nicholas Copernicus University, Poland, 1995.


1. H. J. Lozykowski, W. M. Jadwisienczak and I. Brown Visible Cathodoluminescence of GaN doped with Dy, Er and Tm, Appl. Phys. Lett. Vol. 74, 1129 (1999).

2. W. M. Jadwisienczak, H. J. Lozykowski, I. Berishev, A. Bensaoula and I. G. Brown, Visible Emission from AlN Doped with Eu and Tb Ions, J. Appl. Phys. Vol. 89, 4384 (2001).

3. A. Khan, W. M. Jadwisienczak, and M. E. Kordesch, From Zn Microspheres to Hollow ZnO Microspheres: A simple Route to the Growth of Large Scale Metallic Zn Micorspheres and Hollow ZnO Microspheres, Physica E, Vol.33, 331 (2006).

4. K. Wisniewski, W. M. Jadwisienczak, T. Thomas and M. Spencer, High Pressure Luminescence Studies of Europium Doped GaN, J. Rare Earth, Vol. 27, pp.667-670 (2009).

5. J. Wu, R. Palai, W. M. Jadwisienczak, M. S. Shur, Bandgap Engineering in MBE Grown Al(1-x)GaxN Epitaxial Columnar Nanostructures, J. Phys. D: Appl. Phys. 45, 015104 (2012).